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STP28N65M2

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description In a Pack of 5, N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220 STMicroelectronics STP28N65M2
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Buying Options
Total Price: USD $2.56
Unit Price: USD $2.5608
≥1 USD $2.5608
≥10 USD $2.032624
≥100 USD $1.742224
≥500 USD $1.548642
≥1000 USD $1.326028
≥3000 USD $1.248597
Inventory: 963
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Dimensions

Width 4.6mm
Length 10.4mm
Height 19.68mm

Technical

Max Junction Temperature (Tj) 150°C
Avalanche Energy Rating (Eas) 760 mJ
Pulsed Drain Current-Max (IDM) 80A
Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 25V
JEDEC-95 Code TO-220AB
Threshold Voltage 3V
Continuous Drain Current (ID) 20A
Turn-Off Delay Time 59 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Input Capacitance (Ciss) (Max) @ Vds 1440pF @ 100V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 180m Ω @ 10A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 13.4 ns
Case Connection DRAIN
Power Dissipation 170W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 170W Tc
Number of Channels 1
Number of Elements 1
Base Part Number STP28N
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series MDmesh? M2
Packaging Tube
Operating Temperature 150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 16 Weeks

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