STP26NM60ND
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Tube
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Buying Options
Total Price: USD $1.89
Unit Price: USD $1.88765
≥1 USD $1.88765
≥10 USD $1.5485
≥100 USD $1.50005
≥500 USD $1.4516
≥1000 USD $1.40315
Inventory: 1446
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 329.988449mg
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series FDmesh? II
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STP26N
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 190W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 190W
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 175m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1817pF @ 100V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 54.6nC @ 10V
Rise Time 14.5 ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 27.5 ns
Turn-Off Delay Time 69 ns
Continuous Drain Current (ID) 21A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Pulsed Drain Current-Max (IDM) 84A
DS Breakdown Voltage-Min 600V
Dimensions
Height 15.75mm
Length 10.4mm
Width 4.6mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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