Pulsed Drain Current-Max (IDM) 480A
Drain to Source Breakdown Voltage 75V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 120A
Turn-Off Delay Time 144.4 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 183nC @ 10V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Input Capacitance (Ciss) (Max) @ Vds 11400pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 3m Ω @ 60A, 10V
Transistor Application SWITCHING
Turn On Delay Time 31.4 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series DeepGATE?, STripFET? VI
Operating Temperature -55°C~175°C TJ