STP21NM60N
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 17A TO-220
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Buying Options
Total Price: USD $1.91
Unit Price: USD $1.91235
≥1 USD $1.91235
≥10 USD $1.5694
≥100 USD $1.52
≥500 USD $1.47155
≥1000 USD $1.42215
Inventory: 1189
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 17A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP21N
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 140W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 140W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 220m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 50V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Pulsed Drain Current-Max (IDM) 68A
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.22Ohm
Gate to Source Voltage (Vgs) 25V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 17A
Turn-Off Delay Time 84 ns
Fall Time (Typ) 31 ns
Vgs (Max) ±25V
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Alternative Model
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