STP20NM65N
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220 Tube
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Buying Options
Total Price: USD $1.38
Unit Price: USD $1.3813
≥1 USD $1.3813
≥10 USD $1.13335
≥100 USD $1.0982
≥500 USD $1.06305
≥1000 USD $1.0279
Inventory: 1267
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 4.6mm
Length 10.4mm
Height 15.75mm
Technical
Pulsed Drain Current-Max (IDM) 60A
Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 25V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 15A
Turn-Off Delay Time 75 ns
Fall Time (Typ) 20 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 10 ns
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Input Capacitance (Ciss) (Max) @ Vds 1280pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 270m Ω @ 7.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 15 ns
Power Dissipation 160W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 125W Tc
Number of Elements 1
Pin Count 3
Base Part Number STP20N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Resistance 270mOhm
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series MDmesh? II
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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