STP20NM50FD
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 20A TO-220
PDF
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Buying Options
Total Price: USD $4.15
Unit Price: USD $4.1536
≥1 USD $4.1536
≥10 USD $3.318128
≥100 USD $3.074632
Inventory: 1042
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status Non-RoHS Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 700 mJ
Pulsed Drain Current-Max (IDM) 80A
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 20A
Fall Time (Typ) 15 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 20ns
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Input Capacitance (Ciss) (Max) @ Vds 1380pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 250m Ω @ 10A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 22 ns
Power Dissipation 192W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 192W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STP20N
Current Rating 20A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 500V
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
Resistance 250mOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series FDmesh?
Packaging Tube
Operating Temperature -65°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 16 Weeks
Alternative Model
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