Drain to Source Breakdown Voltage 1.05kV
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.4A
Turn-Off Delay Time 27 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1050V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1.4A Tc
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 100V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Rds On (Max) @ Id, Vgs 11 Ω @ 600mA, 10V
Power Dissipation-Max 60W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ