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STP1N105K3

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-Ch 1050V 8Ohm 1.4A SuperMESH3 MOS
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Buying Options
Total Price: USD $1.39
Unit Price: USD $1.3904
≥1 USD $1.3904
≥10 USD $1.116368
≥100 USD $0.918544
Inventory: 501
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

Technical

Drain to Source Breakdown Voltage 1.05kV
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.4A
Turn-Off Delay Time 27 ns
Fall Time (Typ) 50 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1050V
Rise Time 7ns
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1.4A Tc
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 100V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Rds On (Max) @ Id, Vgs 11 Ω @ 600mA, 10V
FET Type N-Channel
Turn On Delay Time 6 ns
Power Dissipation 60W
Power Dissipation-Max 60W Tc
Configuration Single
Base Part Number STP1N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Resistance 11Ohm
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series SuperMESH3?
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

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