STP190N55LF3
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 120A TO-220
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Buying Options
Total Price: USD $4.71
Unit Price: USD $4.708
≥1 USD $4.708
≥10 USD $3.730144
≥100 USD $3.197304
≥500 USD $2.84203
≥1000 USD $2.433482
≥3000 USD $2.291388
Inventory: 956
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series STripFET?
Turn-Off Delay Time 160 ns
Continuous Drain Current (ID) 120A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 18V
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 480A
Avalanche Energy Rating (Eas) 1000 mJ
Fall Time (Typ) 40 ns
Vgs (Max) ±18V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Rise Time 40 ns
Gate Charge (Qg) (Max) @ Vgs 80nC @ 5V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Input Capacitance (Ciss) (Max) @ Vds 6200pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 3.7m Ω @ 30A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 20 ns
Power Dissipation 312W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 312W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STP190
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
Resistance 3.7Ohm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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