STP180N55F3
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N Ch 600V 6A Hyper fast IGBT
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Buying Options
Total Price: USD $2.83
Unit Price: USD $2.83005
≥1 USD $2.83005
≥10 USD $2.3218
≥100 USD $2.2496
≥500 USD $2.1774
≥1000 USD $2.10425
Inventory: 8388
Minimum: 1
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Technical Details
Technical
Nominal Vgs 4 V
Pulsed Drain Current-Max (IDM) 480A
Drain to Source Breakdown Voltage 55V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Threshold Voltage 4V
Continuous Drain Current (ID) 60A
Turn-Off Delay Time 110 ns
Fall Time (Typ) 50 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 150 ns
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 3.8m Ω @ 60A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 25 ns
Power Dissipation 330W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 330W Tc
Number of Elements 1
Pin Count 3
Base Part Number STP180
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
Resistance 3.8MOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series STripFET?
Packaging Tube
Operating Temperature -55°C~175°C TJ
Dimensions
Height 15.75mm
Length 10.4mm
Width 4.6mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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