STP13NM60ND
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 0.32Ohm 11A FDMesh II
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Buying Options
Total Price: USD $3.37
Unit Price: USD $3.3704
≥1 USD $3.3704
≥10 USD $2.66904
≥100 USD $2.287736
≥500 USD $2.033574
≥1000 USD $1.741247
≥3000 USD $1.639572
Inventory: 94
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 4.6mm
Length 10.4mm
Height 15.75mm
Technical
Avalanche Energy Rating (Eas) 162 mJ
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 44A
Gate to Source Voltage (Vgs) 25V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 11A
Turn-Off Delay Time 9.6 ns
Fall Time (Typ) 15.4 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Rise Time 10 ns
Gate Charge (Qg) (Max) @ Vgs 24.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Input Capacitance (Ciss) (Max) @ Vds 845pF @ 50V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 380m Ω @ 5.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 46.5 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 109W Tc
Number of Elements 1
Base Part Number STP13N
Technology MOSFET (Metal Oxide)
Resistance 380mOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series FDmesh? II
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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