Avalanche Energy Rating (Eas) 400 mJ
Pulsed Drain Current-Max (IDM) 52A
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.55Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 13A
Turn-Off Delay Time 61 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Input Capacitance (Ciss) (Max) @ Vds 2030pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Rds On (Max) @ Id, Vgs 550m Ω @ 4.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 150W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ