STP13NK50Z
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220 Tube
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Buying Options
Total Price: USD $4.28
Unit Price: USD $4.2807
≥1 USD $4.2807
≥10 USD $3.51215
≥100 USD $3.4029
≥500 USD $3.2927
≥1000 USD $3.18345
Inventory: 1445
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP13N
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 140W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 140W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 480m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Rise Time 23ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 61 ns
Continuous Drain Current (ID) 11A
Threshold Voltage 3.75V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.48Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 44A
Dual Supply Voltage 500V
Avalanche Energy Rating (Eas) 240 mJ
Nominal Vgs 3.75 V
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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