Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.4m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4450pF @ 15V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
Drain to Source Voltage (Vdss) 24V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Continuous Drain Current (ID) 90A
Drain-source On Resistance-Max 0.0044Ohm
Pulsed Drain Current-Max (IDM) 360A
DS Breakdown Voltage-Min 24V
Avalanche Energy Rating (Eas) 900 mJ