Avalanche Energy Rating (Eas) 200 mJ
Pulsed Drain Current-Max (IDM) 48A
Drain to Source Breakdown Voltage -60V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 40 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 200m Ω @ 10A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 60W Tc
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) Not Applicable
Operating Temperature -55°C~175°C TJ