STP12NM60N
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 10A TO-220
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Buying Options
Total Price: USD $1.49
Unit Price: USD $1.48865
≥1 USD $1.48865
≥10 USD $1.2217
≥100 USD $1.1837
≥500 USD $1.1457
≥1000 USD $1.1077
Inventory: 1205
Minimum: 1
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Technical Details
Technical
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 50V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 30.5nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 10A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 410m Ω @ 5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 90W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 90W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STP12
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Resistance 410mOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series MDmesh? II
Packaging Tube
Operating Temperature -55°C~150°C TJ
Avalanche Energy Rating (Eas) 200 mJ
Pulsed Drain Current-Max (IDM) 40A
Drain to Source Breakdown Voltage 600V
Physical
Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Alternative Model
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