STP10NM50N
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 7A TO220
PDF
/
Buying Options
Total Price: USD $1.34
Unit Price: USD $1.33855
≥1 USD $1.33855
≥10 USD $1.0982
≥100 USD $1.064
≥500 USD $1.0298
≥1000 USD $0.9956
Inventory: 54334
Minimum: 1
-
+
Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.6mm
Length 10.4mm
Height 15.75mm
Technical
Pulsed Drain Current-Max (IDM) 28A
Drain to Source Breakdown Voltage 500V
Drain Current-Max (Abs) (ID) 7A
Gate to Source Voltage (Vgs) 25V
JEDEC-95 Code TO-220AB
Threshold Voltage 3V
Continuous Drain Current (ID) 7A
Turn-Off Delay Time 7.8 ns
Fall Time (Typ) 12 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 4.4 ns
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 630m Ω @ 3.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 7.8 ns
Power Dissipation 70W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 70W Tc
Number of Elements 1
Pin Count 3
Base Part Number STP10
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Resistance 630mOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series MDmesh? II
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
Recommended For You
STP10NM50N+price,STP10NM50N+datasheet,STP10NM50N+in stock,buy+STP10NM50N,finder+STP10NM50N,STP10NM50N+tutorials,STP10NM50N+download