Avalanche Energy Rating (Eas) 290 mJ
Drain to Source Breakdown Voltage 800V
Drain Current-Max (Abs) (ID) 9A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 9A
Turn-Off Delay Time 65 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Input Capacitance (Ciss) (Max) @ Vds 2180pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Rds On (Max) @ Id, Vgs 900m Ω @ 4.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 40W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ