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STP10NK50Z

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-Ch 500 V 0.55 Ohm 9 A SuperMESH
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Technical

Avalanche Energy Rating (Eas) 230 mJ
Pulsed Drain Current-Max (IDM) 36A
Drain to Source Breakdown Voltage 500V
Drain-source On Resistance-Max 0.7Ohm
Drain Current-Max (Abs) (ID) 9A
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 9A
Turn-Off Delay Time 43 ns
Fall Time (Typ) 15 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 17ns
Gate Charge (Qg) (Max) @ Vgs 39.2nC @ 10V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Input Capacitance (Ciss) (Max) @ Vds 1219pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Rds On (Max) @ Id, Vgs 700m Ω @ 4.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 125W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 125W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STP10
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 9A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 500V
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series SuperMESH?
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

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