STP10N95K5
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 950V 8A TO-220
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Buying Options
Total Price: USD $2.88
Unit Price: USD $2.8776
≥1 USD $2.8776
≥10 USD $2.2836
≥100 USD $1.957384
≥500 USD $1.739918
≥1000 USD $1.489805
≥3000 USD $1.402808
Inventory: 1082
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 329.988449mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH5?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP10
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 130W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 130W
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 800m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 630pF @ 100V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 14 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) 8A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.8Ohm
Drain to Source Breakdown Voltage 950V
Dimensions
Height 15.75mm
Length 10.4mm
Width 4.6mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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