Max Junction Temperature (Tj) 150°C
Pulsed Drain Current-Max (IDM) 26A
Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 4A
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 6.5A
Turn-Off Delay Time 35 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 50m Ω @ 2A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.3W Tc
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOW THRESHOLD
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ