Max Junction Temperature (Tj) 175°C
Drain to Source Breakdown Voltage -60V
Drain Current-Max (Abs) (ID) 3A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -3A
Turn-Off Delay Time 14 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 48V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 160m Ω @ 1.5A, 10V
Transistor Application SWITCHING
Turn On Delay Time 6.4 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.6W Tc
Reach Compliance Code not_compliant
Technology MOSFET (Metal Oxide)
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series DeepGATE?, STripFET? VI
Operating Temperature -55°C~175°C TJ