Max Junction Temperature (Tj) 150°C
Drain to Source Breakdown Voltage 400V
Drain Current-Max (Abs) (ID) 3A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 1.8A
Turn-Off Delay Time 18 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1.8A Tc
Input Capacitance (Ciss) (Max) @ Vds 165pF @ 50V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Rds On (Max) @ Id, Vgs 3.4 Ω @ 600mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.3W Ta
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ