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RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 100V 1A 4-Pin(3+Tab) SOT-223 T/R
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Buying Options
Total Price: USD $0.27
Unit Price: USD $0.26885
≥1 USD $0.26885
≥10 USD $0.2204
≥100 USD $0.21375
≥500 USD $0.2071
≥1000 USD $0.20045
Inventory: 1149
Minimum: 1
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series STripFET? II
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STN1N
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Power Dissipation-Max 2.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 800m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 105pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1A Tc
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Rise Time 5.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.5 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 500mA
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 1A
Drain-source On Resistance-Max 0.8Ohm
Drain to Source Breakdown Voltage 100V

Dimensions

Height 1.6mm
Length 6.7mm
Width 3.7mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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