Drain to Source Breakdown Voltage 200V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1A
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 15.7nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1A Tc
Input Capacitance (Ciss) (Max) @ Vds 206pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 1.5 Ω @ 500mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.9W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ