Avalanche Energy Rating (Eas) 150 mJ
DS Breakdown Voltage-Min 40V
Pulsed Drain Current-Max (IDM) 480A
Drain-source On Resistance-Max 0.004Ohm
Drain Current-Max (Abs) (ID) 101A
Drive Voltage (Max Rds On,Min Rds On) 6.5V 10V
Drain to Source Voltage (Vdss) 40V
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Input Capacitance (Ciss) (Max) @ Vds 5600pF @ 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Rds On (Max) @ Id, Vgs 3m Ω @ 75A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 130W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ