Avalanche Energy Rating (Eas) 120 mJ
DS Breakdown Voltage-Min 60V
Drain-source On Resistance-Max 0.031Ohm
Continuous Drain Current (ID) 32A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Input Capacitance (Ciss) (Max) @ Vds 1340pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 27m Ω @ 9.6A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 4.8W Ta 55W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series Automotive, AEC-Q101, STripFET? F6
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ