STL8N65M5
RoHS 
RoHS compliant
RoHS compliantPackage 14-PowerVQFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 7A POWERFLAT
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 5.1mm
Length 5.1mm
Height 950μm
Technical
Pulsed Drain Current-Max (IDM) 5.6A
Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 7A
Turn-Off Delay Time 20 ns
Fall Time (Typ) 11 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 14 ns
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1.4A Ta 7A Tc
Input Capacitance (Ciss) (Max) @ Vds 690pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 600m Ω @ 3.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 50 ns
Case Connection DRAIN
Power Dissipation 70W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta 70W Tc
Number of Elements 1
JESD-30 Code S-XQCC-N5
Pin Count 14
Base Part Number STL8
Terminal Position QUAD
Technology MOSFET (Metal Oxide)
Additional Feature ULTRA-LOW RESISTANCE
Resistance 600mOhm
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series MDmesh? V
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 14
Package / Case 14-PowerVQFN
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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