DS Breakdown Voltage-Min 100V
Pulsed Drain Current-Max (IDM) 140A
Drain-source On Resistance-Max 0.02Ohm
Drain Current-Max (Abs) (ID) 35A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 50V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 20m Ω @ 4A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.5W Ta 50W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series DeepGATE?, STripFET? VII
Operating Temperature -55°C~150°C TJ