Pulsed Drain Current-Max (IDM) 76A
Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 19A
Turn-Off Delay Time 38.4 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Current - Continuous Drain (Id) @ 25°C 85A Tc
Input Capacitance (Ciss) (Max) @ Vds 3400pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 5.7m Ω @ 8.5A, 10V
Transistor Application SWITCHING
Turn On Delay Time 21.8 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 80W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE ENERGY RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ