Pulsed Drain Current-Max (IDM) 74A
Drain to Source Breakdown Voltage 75V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 7120pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 6.3m Ω @ 9A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 80W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series DeepGATE?, STripFET? VI
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ