Drain to Source Breakdown Voltage 40V
Drain-source On Resistance-Max 0.007Ohm
Drain Current-Max (Abs) (ID) 20A
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 10A
Turn-Off Delay Time 62 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 2530pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 5m Ω @ 10A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 80W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 225
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ