Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 6A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 6A
Turn-Off Delay Time 9.4 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 283pF @ 24V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Rds On (Max) @ Id, Vgs 25m Ω @ 3A, 10V
Turn On Delay Time 4.8 ns
Element Configuration Single
Power Dissipation-Max 2.4W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series DeepGATE?, STripFET? VI
Operating Temperature -55°C~150°C TJ