Avalanche Energy Rating (Eas) 960 mJ
DS Breakdown Voltage-Min 650V
Pulsed Drain Current-Max (IDM) 90A
Drain-source On Resistance-Max 0.069Ohm
Drain Current-Max (Abs) (ID) 22A
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 22.5A
Turn-Off Delay Time 84 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4.3A Ta 22.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 69m Ω @ 20A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.8W Ta 189W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Operating Temperature 150°C TJ