Avalanche Energy Rating (Eas) 150 mJ
Pulsed Drain Current-Max (IDM) 60A
Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 15A
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 55A
Turn-Off Delay Time 18 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Input Capacitance (Ciss) (Max) @ Vds 965pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 8.8m Ω @ 7.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 60W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) 225
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOW THRESHOLD
Terminal Finish MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ