Operating Temperature 150°C TJ
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.8W Ta 150W Tc
Element Configuration Single
Rds On (Max) @ Id, Vgs 105m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 100V
Current - Continuous Drain (Id) @ 25°C 3.5A Ta 22.5A Tc
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 22.5A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V