Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 22.5A
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 62.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 22.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 120m Ω @ 12A, 10V
Element Configuration Single
Power Dissipation-Max 2.8W Ta 150W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ