Avalanche Energy Rating (Eas) 300 mJ
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 16A
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.3A Ta 16A Tc
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 50V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 215m Ω @ 8A, 10V
Transistor Application SWITCHING
Turn On Delay Time 11.5 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3W Ta 125W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ