Avalanche Energy Rating (Eas) 210 mJ
DS Breakdown Voltage-Min 60V
Pulsed Drain Current-Max (IDM) 80A
Drain-source On Resistance-Max 0.05Ohm
Drain Current-Max (Abs) (ID) 20A
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 22.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Input Capacitance (Ciss) (Max) @ Vds 670pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 40m Ω @ 4A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 4.8W Ta 75W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series Automotive, AEC-Q101, STripFET? II
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ