Pulsed Drain Current-Max (IDM) 8.4A
Drain to Source Breakdown Voltage 600V
Drain Current-Max (Abs) (ID) 2.1A
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 50 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.1A Ta 12A Tc
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 310m Ω @ 6A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3W Ta 110W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ