Avalanche Energy Rating (Eas) 900 mJ
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 160A
Turn-Off Delay Time 107.5 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 61.5nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Input Capacitance (Ciss) (Max) @ Vds 6375pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 1.3m Ω @ 17.5A, 10V
Transistor Application SWITCHING
Turn On Delay Time 18.5 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 136W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature ULTRA-LOW RESISTANCE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series DeepGATE?, STripFET? VI
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ