Pulsed Drain Current-Max (IDM) 560A
Drain to Source Breakdown Voltage 80V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 123A
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V
Current - Continuous Drain (Id) @ 25°C 130A Tc
Input Capacitance (Ciss) (Max) @ Vds 6340pF @ 40V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 3.6m Ω @ 13A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 135W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Additional Feature ULTRA LOW RESISTANCE
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series DeepGATE?, STripFET? VII
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ