STL12N65M5
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 8.5A 8POWERFLAT
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Total Price: USD $1.24
Unit Price: USD $1.238274
≥1 USD $1.238274
≥10 USD $1.188
Inventory: 66
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Pulsed Drain Current-Max (IDM) 7.2A
Drain to Source Breakdown Voltage 650V
Drain-source On Resistance-Max 0.43Ohm
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 8.5A
Turn-Off Delay Time 13 ns
Fall Time (Typ) 13.5 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 10ns
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 644pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 530m Ω @ 4.25A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 48W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 48W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code S-PSSO-N4
Pin Count 4
Base Part Number STL12
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series MDmesh? V
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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