Pulsed Drain Current-Max (IDM) 44A
Drain to Source Breakdown Voltage 40V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 11A
Turn-Off Delay Time 37 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 12.9nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 9.7m Ω @ 5.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.9W Ta 50W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ