STL110NS3LLH7
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 120A POWERFLAT
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Buying Options
Total Price: USD $0.47
Unit Price: USD $0.47315
≥1 USD $0.47315
≥10 USD $0.450622
≥100 USD $0.429827
Inventory: 128
Minimum: 1
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Technical Details
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series STripFET? H7
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STL110
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 4W Ta 75W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 26.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.4m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2110pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 13.7nC @ 4.5V
Rise Time 10.4ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12.5 ns
Turn-Off Delay Time 31.8 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.005Ohm
DS Breakdown Voltage-Min 30V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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