Avalanche Energy Rating (Eas) 150 mJ
Pulsed Drain Current-Max (IDM) 36A
Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 9A
Gate to Source Voltage (Vgs) 22V
Continuous Drain Current (ID) 9A
Turn-Off Delay Time 21 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 19m Ω @ 4.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2W Ta 50W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Additional Feature ULTRA LOW-ON RESISTANCE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ