Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.0072Ohm
Drain Current-Max (Abs) (ID) 22A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 8900pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 4.5m Ω @ 11A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 4.8W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series DeepGATE?, STripFET? VI
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ