STL100N1VH5
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Ch 12V 0.0022 Ohm 25A STripFET V
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Buying Options
Total Price: USD $9.69
Unit Price: USD $9.68715
≥1 USD $9.68715
≥10 USD $7.94865
≥100 USD $7.69975
≥500 USD $7.4518
≥1000 USD $7.20385
Inventory: 1462
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 5
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series STripFET? V
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 3MOhm
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Base Part Number STL100
Pin Count 8
Number of Elements 1
Power Dissipation-Max 60W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 60W
Case Connection DRAIN
Turn On Delay Time 14.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 12.5A, 4.5V
Vgs(th) (Max) @ Id 500mV @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds 2085pF @ 10V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 26.5nC @ 4.5V
Rise Time 31.6 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 500mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 12V
Avalanche Energy Rating (Eas) 300 mJ
Dimensions
Height 950μm
Length 5.2mm
Width 6.15mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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