STI8N65M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 7A I2PAK
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Buying Options
Total Price: USD $11.43
Unit Price: USD $11.4304
≥1 USD $11.4304
≥10 USD $9.3784
≥100 USD $9.0858
≥500 USD $8.79225
≥1000 USD $8.49965
Inventory: 1527
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? V
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Base Part Number STI8
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 70W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Turn On Delay Time 50 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 690pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 7A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.6Ohm
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 28A
Avalanche Energy Rating (Eas) 120 mJ
Nominal Vgs 4 V
Dimensions
Height 10.75mm
Length 10.4mm
Width 4.6mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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