Avalanche Energy Rating (Eas) 85 mJ
Drain to Source Breakdown Voltage 800V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 4.5A
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 255pF @ 100V
Vgs(th) (Max) @ Id 5V @ 100μA
Rds On (Max) @ Id, Vgs 1.6 Ω @ 2A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 85W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ