STI57N65M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh V
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Buying Options
Total Price: USD $14.77
Unit Price: USD $14.7668
≥1 USD $14.7668
≥10 USD $12.1163
≥100 USD $11.7382
≥500 USD $11.35915
≥1000 USD $10.9801
Inventory: 5848
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 4.6mm
Length 10.4mm
Height 9.35mm
Technical
Avalanche Energy Rating (Eas) 960 mJ
Pulsed Drain Current-Max (IDM) 168A
Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 42A
Turn-Off Delay Time 19 ns
Fall Time (Typ) 12 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 15ns
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 63m Ω @ 21A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 73 ns
Case Connection DRAIN
Power Dissipation 250W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 250W Tc
Number of Elements 1
Base Part Number STI57N
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series MDmesh? V
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 17 Weeks
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